Research Areas

[ 2025년도 대표연구업적 ]

Park group’s research interests are classified into Energy efficient Artificial Semiconductor Materials and Devices such as MRAM(STT MRAM, SOM, Skyrmion, SOT), Vertical-SOM, ECRAM, SOM, beyond CMOS, Sensors and Energy harvesting devices using the Chalcogenides and Perovskites. In terms of semiconductor fabrication process, we are interested Vertical structured (3D) SOM, ReRAM, Skyrmion etc using ALD and CMP process. Our goal is to replace with classical semiconductor memorydevies by advanced emerging semiconductor material system and structures.

1. Advanced Emerging Memory Devices: Currently we are mainly conducting research related to

the Resistive Switching Memory using the metal oxide, STT MRAM, V-SOM, Skyrmion

- Improve Self-rectified multilevel application of chalcogenide materials and metal oxides

- New structure of high TMR SOT and Skyrmion MRAM devices

- Resistive switching Mechanism verification by DFT Method

Keyword : AI Semiconductors, ReRAM, V-SOM, Chacognides, SOT, SKyrmion, Mechanism

2. Energy Efficient- Neuromorphic Electric and Optical Devices Developing new materials and structures for the neuromorphic electric devices and optical sysanpse with sensors and energy harvesting

- Metal oxide based FeRAM devices

- Single crystal growth and transfer of Perovksite materials for Resorving Computing

- Flexible optical memrisotr and optical synapse for AI applications

- Self-powered sensor and displays with harvesting techniques.

Keyword : Flexible Devices, Self-powered, HZO, Perovksite, Optical Synase

3. 3D SC Fabrication process : 3D Memory devices, Vertical SOM, Cross-points.

- Semiconductor Fabrication process for 3D device performances

- DFT and TCAD simulation for fabrication Processes

- ALD Process : Process design and precursors

- CMP process : HBM and Cu hybrid bonding

Keyword : Vertical SOM, ALD , DFT simulations, HBM, Cu

4 Thermal Management: Thermal interface materials and Applications to Semiconductors

- Flexible hybrid devices(solar cell, perovskite, etc) and electronic devices (FET, Memory, etc)

- MO ML-based transfer techniques for novel device performance

- Thermal management by using transferable MO monolayer.

Keyword : Thermal Interface Material (TIM), Micro/nano spheres, Thermal conductivity, PKG