Park group’s research interests are classified into Innovative Semiconductor Devices & various Applications such as Perovskite-hybrid memory devices, ECRAM, Memtransisotr, beyond CMOS, Sensors and Energy harvesting devices using the low dimensional compound semiconductors. Our goal is to replace with classical semiconductor materials and devices by advanced semiconductor material system and structures.
1. Advanced Memory Devices: Currently we are mainly conducting research related to
the ReRAM using the metal oxide or Perovskite materials
- Improve Multilevel application of metal oxide nanostructures
- Perovskite nanostructure based Memristors
- Metal Oxide / Perovskite structures for memory devices and others
Keyword : AI Semiconductor, Perovskites, ReRAM, IGZO, MEM Transistor, Optical Synapse
2.Energy Harvesting : Development of techniques for renewable energy harvesting by using
the nano-generator and TENG, etc.
- Flexible TENG, PENG, Solar Cells
- Self-powered sensor and displays with harvesting techniques.
Keyword : Flexible Devices, Self-powered, Piezo/Tribo Electronic Devices
3. ESG and Optical Sensors: Developing new materials and structures for the photodetectors
- Cover from UV to IR ranges : perovskite and others
- Flexible sensors using tranfer method of metal oxide nanomaterials
- Phtocatalyst for Environmental issues by using nanotechnology
Keyword : Metal Oxide Spheres, Perovskite, Quality control, Visible and IR
4. Thermal Management: Thermal interafce materials and Applications to Semiconductors
- Flexible hybrid devices(solar cell, perovskite, etc) and electronic devices (FET, Memory, etc)
- MO ML-based transfer techniques for novel device performance
- Thermal management by using transferable MO monolayer.
Keyword : Thermal Interface Material (TIM), Micro/nano spheres, Thermal conductivity, PKG
5. III-Nitride Power devices: Improvement of leakage properties of AlGaN/GaN based Devices
- Surface treatment for enhancement of device performances
- Passivation layer and TCAD simulation
Keyword : AlGaN/GaN, SK barrier diode, Power device, TCAD simulations